INFINEON

晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 175 W, 1.2 kV, Module

INFINEON

功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 60 A, 600 V, 75 mohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 36 A, 500 V, 120 mohm, 10 V, 5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 20 A, 1.85 V, 105 W, 1.2 kV, Module

INFINEON

晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V

POWEREX

晶体管模块, IGBT, 100A

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 60V, 75A, TO-220AB-3

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 180 A, 200 V, 10 mohm, 10 V, 4 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 60V, 500mA SOT-23

SEMIKRON

晶体管, MOSFET, N沟道, 200 A, 100 V, 0.007 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 52 A, 900 V, 160 mohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 106 A, 75 V, 0.0059 ohm, 10 V, 2 V