规格：晶体管极性 N沟道,
INFINEON
晶体管, IGBT阵列&模块, EasyPACK 2B, N沟道, 100 A, 1.45 V, 300 W, 650 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, EasyPACK, N沟道, 150 A, 1.45 V, 335 W, 650 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, EasyPACK 2B, N沟道, 75 A, 1.45 V, 250 W, 650 V, Module
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 60V V(BR)DSS
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 230 A, 100 V, 6 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 80 A, 500 V, 55 mohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)
INFINEON
MOSFET, N-CH, 75V, 85A, TO-263AB-3
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 42 A, 250 V, 84 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 A, 75 V, 0.0016 ohm, 10 V, 5 V
(EN)
