NEXPERIA

VISHAY

场效应管, MOSFET, N沟道, 60V, 2.3A, TO-236, 整卷

VISHAY

晶体管, MOSFET, N沟道, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V

SEMIKRON

单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V

SEMIKRON

晶体管, IGBT阵列&模块, N沟道, 422 A, 1.85 V, 1.2 kV, Module

VISHAY

晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.1 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.7 A, 60 V, 0.073 ohm, 10 V, 2.4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.35 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 10 A, 55 V, 0.14 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0031 ohm, 10 V, 1.5 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 555 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 105 A, 1.7 V, 355 W, 1.2 kV, Module

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 140 A, 1.7 V, 480 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.7 V, 480 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 150 A, 1.45 V, 430 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 200 A, 1.7 V, 700 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 550 A, 1.95 V, 2.5 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 900 A, 1.75 V, 4.3 kW, 1.2 kV, Module

INFINEON

晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 56 A, 75 V, 7.34 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 21 A, 150 V, 0.034 ohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, 汽车, N沟道, 200 A, 40 V, 3.1 mohm, 10 V, 2.7 V