ROHM

Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

MULTICOMP

场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 225 A, 1.7 V, 780 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 55 A, 1.8 V, 210 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 515 W, 1.2 kV, Module

VISHAY

场效应管, MOSFET, N沟道, 30V, 12A

VISHAY

晶体管, MOSFET, N沟道, 15 A, 60 V, 0.006 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 30 A, 40 V, 8.5 mohm, 10 V, 1.2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V

NEXPERIA

场效应管, MOSFET, N沟道, 30V, 1.9A, 3-SOT-23, 整卷

NEXPERIA

晶体管, MOSFET, N沟道, 190 mA, 100 V, 5 ohm, 5 V, 2 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 440 A, 1.7 V, 1.45 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 580 A, 1.7 V, 2 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 55 A, 2.3 V, 200 W, 1.2 kV, EconoPIM

INFINEON

晶体管, IGBT阵列&模块, N沟道, 600 A, 1.75 V, 3 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 800 A, 1.7 V, 3.55 kW, 1.2 kV, Module

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 100V, 75A, TO-247

INFINEON

场效应管, MOSFET, N沟道, 100V, 180A, TO-220AB

VISHAY

晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V

VISHAY

功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V