VISHAY

场效应管, MOSFET, N沟道, 40V, 3.9A, TO-236, 整卷

VISHAY

晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0058 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 225 A, 1.7 V, 780 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 55 A, 1.8 V, 210 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 105 A, 1.7 V, 20 mW, 1.2 kV, Module

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V

SEMIKRON

晶体管, IGBT阵列&模块, N沟道, 160 A, 1.8 V, 1.2 kV, Module

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 50V, 200mA SOT-23, 整卷

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module

INFINEON

晶体管, MOSFET, N沟道, 160 A, 55 V, 2.6 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0107 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 28 A, 55 V, 0.04 ohm, 10 V, 2 V

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V

NTE ELECTRONICS

场效应管, MOSFET

ROHM

Silicon Carbide Power MOSFET, N Channel, 39 A, 650 V, 0.06 ohm, 18 V, 5.6 V

VISHAY

晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 580 A, 1.7 V, 2 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, Sixpack, N沟道, 50 A, 1.85 V, 280 W, 1.2 kV, Module

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 380 mA, 60 V, 1.19 ohm, 10 V, 2.3 V

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 555 W, 1.2 kV, Module