规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.85 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 5.2A D2-PAK
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 86 A, 300 V, 0.033 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 12A, TO-252, 整卷
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0126 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.05 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, IGBT阵列&模块, N沟道, 11 A, 2 V, 36 W, 600 V, SIP
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 75 A, 1.7 V, 280 W, 1.2 kV, Module
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.69 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 80A, TO-263AB, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 280mA, SOT-23, 整卷
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
场效应管, MOSFET, N沟道, 500V, 12A, TO-204AA
(EN)
