规格：晶体管极性 N沟道,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 150 V, 0.101 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.009 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 3.3 mohm, 20 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 102 A, 650 V, 0.03 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 150 A, 1.75 V, 790 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 840 A, 2 V, 3.15 kW, 1.7 kV, Module
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 112 A, 500 V, 0.039 ohm, 10 V, 5 V
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-23, 整卷
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 330 A, 3.4 V, 2.2 kW, 3.3 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 100 A, 1.55 V, 600 W, 1.2 kV, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
(EN)
