INFINEON

晶体管, IGBT阵列&模块, N沟道, 1.2 kA, 2.5 V, 13.5 kW, 4.5 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 2.4 kA, 1.9 V, 15.5 kW, 1.7 kV, Module

INFINEON

晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 1.9 A, 150 V, 280 mohm, 10 V, 5.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 60V, 4A, SOT-223, 整卷

SEMIKRON

单晶体管 双极, 增强模式, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 3.3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V

MICROCHIP

场效应管, MOSFET, N沟道, 650V, 0.3A, TO-252AA-3

VISHAY

场效应管, N通道, MOSFET, 100V, 110A TO-263

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8

VISHAY

场效应管, MOSFET, N沟道, 30V, 50A, POWERPAK8

NEXPERIA

场效应管, MOSFET, N沟道 通道, 30V, 850MA, 3-SOT-23, 整卷

VISHAY

场效应管, MOSFET, N沟道, 250V, 3.8A, SOIC

VISHAY

MOSFET, N CHANNEL, 30V, 25A, POWERPAK SO-8

VISHAY

晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0036 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0017 ohm, 10 V, 2.2 V

INFINEON

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0017 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 36 A, 34 V, 0.01 ohm, 10 V, 2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.049 ohm, 4.5 V, 1.3 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 1.8 A, 30 V, 0.135 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.055 ohm, 10 V, 2.6 V

INFINEON

晶体管, MOSFET, N沟道, 40 A, 25 V, 0.003 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 68 A, 25 V, 0.0038 ohm, 10 V, 1.9 V