规格：晶体管极性 N沟道,
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 车用, 100V, 42A, TO-251AA
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 150 V, 54 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 14A, TO-204AA
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 75 V, 0.0056 ohm, 10 V, 3.7 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.5 ohm, 10 V, 5.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 40V, 100A, TO-220AB
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 0.0062 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 1.2 kV, 0.5 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 80 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
