规格：晶体管极性 N沟道,
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.011OHM, 40A, TO-252AA-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.0439OHM, 16A,
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 150 A, 3.2 V, 780 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 225 A, 3.2 V, 1.25 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 310 A, 2 V, 1.25 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 320 A, 1.85 V, 1.05 kW, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 370 A, 3.2 V, 1.95 kW, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 450 A, 1.75 V, 1.6 kW, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 370 A, 3.2 V, 1.95 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 100 A, 1.45 V, 335 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 60 A, 1.45 V, 190 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 100 A, 1.45 V, 335 W, 600 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 75 A, 1.7 V, 280 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 105 A, 1.7 V, 355 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 650 A, 1.7 V, 2.25 kW, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.7 V, 2.8 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, MOSFET, N沟道, 94 A, 55 V, 7.5 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, Q3-Class, N沟道, 63 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 70 A, 3.2 V, 355 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module
(EN)
