规格：晶体管极性 N沟道,
INFINEON
晶体管, IGBT阵列&模块, N沟道, 340 A, 1.95 V, 1.5 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 620 A, 2 V, 2.25 kW, 1.7 kV, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, SOT-223, SMD, 1.5A, 100V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 40 A, 600 V, 0.14 ohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 560 A, 1.55 V, 1.45 kW, 650 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 700 A, 1.55 V, 1.8 kW, 650 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 950 A, 1.75 V, 3.35 kW, 1.2 kV, Module
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 90 A, 2.2 V, 190 W, 1.2 kV, Y4-M5
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 数字音频 150V, 17A, TO-220AB
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.28 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 50 mohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
晶体管, MOSFET, N沟道, 73 A, 100 V, 25 mohm, 10 V, 5 V
(EN)
