规格：晶体管极性 N沟道,
INFINEON
晶体管, IGBT阵列&模块, N沟道, 930 A, 2 V, 4.15 kW, 1.7 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, SOT-23, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
ROHM
单晶体管 双极, N沟道, 180 A, 1.2 kV, 2.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 1.39 kA, 2 V, 6.25 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 660 A, 3.4 V, 4.8 kW, 3.3 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 1 kA, 2.55 V, 3.3 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 2.3 kA, 2 V, 8.95 kW, 1.7 kV, Module
(EN)
INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 42W, TO-220 FULLPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
(EN)INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 10.2A, SOT-223, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 4.5A, SOIC, 整卷
(EN)
