规格：晶体管极性 N沟道,
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 200 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 A, 40 V, 0.00135 ohm, 20 V, 4 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 30 A, 2.7 V, 85 W, 600 V, Module
(EN)
INFINEON
晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V
(EN)
POWEREX
模块, 晶体管, IGBT, 1200V, 600A, IGBTMOD
(EN)
ROHM
晶体管, MOSFET, N沟道, 3 A, 45 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00168 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.039 ohm, 4.5 V, 300 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0026 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V
(EN)
