DIODES INC.

晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 100 A, 2.4 V, 310 W, 600 V, Module

IXYS SEMICONDUCTOR

晶体管, IGBT阵列&模块, N沟道, 100 A, 2.3 V, 450 W, 1.2 kV, SOT-227B

INFINEON

晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0022 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV

INFINEON

晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 70 A, 300 V, 0.0255 ohm, 10 V, 3 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 15 V, 5 V

ROHM

功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 120 A, 250 V, 24 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V

SEMIKRON

晶体管, IGBT阵列&模块, N沟道, 660 A, 2 V, 1.7 kV, Module

ROHM

Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 100 A, 650 V, 0.03 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 140 A, 300 V, 24 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 740 mohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

晶体管, IGBT阵列&模块, N沟道, 134 A, 3.5 V, 690 W, 1.2 kV, SOT-227B

INFINEON

晶体管, IGBT阵列&模块, N沟道, 45 A, 1.85 V, 205 W, 1.2 kV, Module

INFINEON

晶体管, MOSFET, N沟道, 140 A, 30 V, 5.5 mohm, 10 V, 1 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 15 A, 55 V, 13 mohm, 5 V, 2.5 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 169A, TO-220AB