FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 150 A, 2.2 V, 540 W, 1.2 kV, Module

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V

INFINEON

场效应管, MOSFET, N沟道, 400V, 14A, TO-204AA

INFINEON

晶体管, IGBT阵列&模块, N沟道, 83 A, 1.85 V, 335 W, 1.2 kV, Module

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 96 A, 200 V, 24 mohm, 10 V, 5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V

NTE ELECTRONICS

场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220

INFINEON

晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 205 W, 1.2 kV, Module

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, Q3-Class, N沟道, 24 A, 1 kV, 0.44 ohm, 10 V, 6.5 V

NTE ELECTRONICS

晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 400 A, 1.45 V, 940 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 480 A, 1.7 V, 1.45 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 675 A, 1.75 V, 2.25 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 75 A, 1.85 V, 395 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 840 A, 1.95 V, 3.35 kW, 1.7 kV, Module

IXYS SEMICONDUCTOR

晶体管, IGBT阵列&模块, N沟道, 105 A, 3.2 V, 500 W, 1.2 kV, SOT-227B

VISHAY

MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 98 A, 500 V, 0.05 ohm, 10 V, 5 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 20V, 915mA, SC-75, 整卷

VISHAY

晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V