规格：晶体管极性 N沟道,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 680 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 800 V, 420 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 35 A, 3 V, 200 W, 1.2 kV, EconoPACK
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 25 A, 1.7 V, 155 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 40 A, 1.8 V, 210 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.7 V, 280 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 280 W, 1.2 kV, Module
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 6.3A, SOT-223, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 300 A, 1.55 V, 940 W, 650 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 600 A, 1.75 V, 4.05 kW, 1.2 kV, Module
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 700 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 616 A, 1.8 V, 1.2 kV, Module
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 30A
(EN)
