ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 30V, 5A, SuperSOT, 整卷

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V

INFINEON

晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V

MICROCHIP

场效应管, MOSFET, 耗尽模式, 500V, 1KΩ, 3-SOT-89, 卷装

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 30V, 560mA SOT-23, 整卷

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 30V, 4A, SOT-23, 整卷

VISHAY

晶体管, MOSFET, N沟道, 4.3 A, 40 V, 0.042 ohm, 10 V, 1.5 V

VISHAY

晶体管, MOSFET, N沟道, 5.9 A, 20 V, 0.025 ohm, 4.5 V, 1 V

VISHAY

场效应管, N通道, MOSFET, 60V, 20A, POWERPAK SO

VISHAY

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 2 A, 20 V, 0.04 ohm, 4.5 V, 700 mV

INFINEON

晶体管, MOSFET, N沟道, 9 A, 40 V, 0.012 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 530 mA, 20 V, 0.35 ohm, 4.5 V, 1 V

FUJI ELECTRIC

晶体管, IGBT阵列&模块, 2件, N沟道, 150 A, 2.6 V, 780 W, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 150 A, 2.35 V, 500 W, 600 V, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 150 A, 1.85 V, 1.07 kW, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 200 A, 2.05 V, 1.04 kW, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 200 A, 1.75 V, 1.5 kW, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 400 A, 2.05 V, 2.045 kW, 1.2 kV, Module

VISHAY

晶体管, MOSFET, N沟道, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 200V, 30A, TO-204AE

INFINEON

晶体管, MOSFET, N沟道, 6 A, 100 V, 300 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 100V, 8A TO-205AF