规格：晶体管极性 N沟道,
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
晶体管, MOSFET, N沟道, 32 A, 300 V, 130 mohm, 10 V, 5 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 75 A, 1.85 V, 385 W, 1.2 kV, Module
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 100 A, 1.6 V, 215 W, 600 V, Module
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 170 W, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, 7件, N沟道, 35 A, 2.1 V, 240 W, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 35 A, 1.85 V, 210 W, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 280 W, 1.2 kV, Module
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 16 A, 160 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 16 A, 200 V
(EN)SEMELAB
晶体管, MOSFET, 音频, N沟道, 16 A, 200 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.16 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 185 A, 30 V, 0.00159 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 500 mA, 30 V, 1.5 ohm, 4 V, 400 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.09 ohm, 4.5 V, 250 mV
(EN)
