规格：晶体管极性 N沟道,
INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.45 V, 225 W, 600 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 165 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, 四路, N沟道, 75 A, 3.2 V, 500 W, 1.2 kV, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 140 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.6 A, 650 V, 950 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.062 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 72.8 A, 600 V, 0.0287 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 320 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.8 A, 600 V, 0.255 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.244 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 140 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.33 ohm, 10 V, 2.5 V
(EN)
