规格：晶体管极性 N沟道,
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 12 A, 33 V, 0.005 ohm, 10 V, 1 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.034 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 15 A, 1.85 V, 130 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 115 W, 600 V, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 200 V, 32 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.027 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.027 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.039 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.04 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.14 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.8 A, 200 V, 0.29 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.074 ohm, 10 V, 2 V
(EN)
