规格：晶体管极性 N沟道,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00048 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 192 A, 100 V, 0.0035 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.115 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 28 A, 650 V, 0.062 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.25 ohm, 10 V, 1 V
(EN)
