规格：晶体管极性 N沟道,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.032 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 68.8 A, 100 V, 0.0065 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 40 V, 0.0033 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 50 V, 0.03 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 4.5 A, 30 V, 0.03 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0015 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0025 ohm, 10 V, 1.8 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 12.5 A, 700 V, 0.3 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.005 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.054 ohm, 8 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 100 mohm, 4.5 V, 700 mV
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 A, 100 V, 10 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 14 mohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 5 mohm, 10 V, 2.2 V
(EN)
