
INFINEON
功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.97 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 47 A, 650 V, 70 mohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V

FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 4 A, SIP

DIODES INC.
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V

NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.2 mohm, 10 V, 2.5 V

TOSHIBA
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V

INFINEON
晶体管, MOSFET, N沟道, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0078 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 19 mohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V

INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2.2 V

VISHAY
场效应管, MOSFET, N沟道

INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.013 ohm, 10 V, 2 V