规格：晶体管极性 N沟道,
NEXPERIA
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.033 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19.4 A, 30 V, 0.0029 ohm, 10 V, 2.2 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.39 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 60 V, 0.021 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 378 A, 40 V, 0.00057 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 230 mA, 20 V, 1.8 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.045 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 140 mA, 450 V, 50 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 130 A, 200 V, 0.008 ohm, 30 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 20 V, 0.017 ohm, 2.5 V, 550 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 80 V, 0.02 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0101 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 207 A, 30 V, 0.00095 ohm, 10 V, 1.7 V
(EN)
