规格：晶体管极性 N沟道,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 100V, 0.0114OHM, 49A, POWER 56-8
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 380 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00103 ohm, 10 V, 1.73 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 25 V, 0.0038 ohm, 20 V, 1.9 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.3 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.6 A, 900 V, 1.1 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 2 A, 1.5 kV, 10 ohm, 10 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 150 V, 95 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00195 ohm, 10 V, 3 V
(EN)
