
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 200 V, 0.29 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V

WOLFSPEED
功率场效应管, MOSFET, N沟道, 5.3 A, 1.7 kV, 1 ohm, 20 V, 2.6 V

VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V

DIODES INC.
晶体管, MOSFET, N沟道, 900 mA, 100 V, 650 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV

INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, D2-PAK

INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V

ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 18A TO-220AB

VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V

INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23