规格：晶体管极性 N沟道,
VISHAY
晶体管, MOSFET, N沟道, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.0073 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 530 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 44A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A, D2-PAK
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 250 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0015 ohm, 4.5 V, 2.5 V
(EN)
