规格：晶体管极性 N沟道,
INFINEON
功率场效应管, MOSFET, N沟道, 14.7 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.83 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0065 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 37 A, 80 V, 0.0205 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 18 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-220AB
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.011 ohm, 10 V, 3 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 40 V, 0.0047 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 93 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V
(EN)
