规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0016 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.0515 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 45 A, 60 V, 0.021 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 26 A, 150 V, 0.036 ohm, 10 V, 4.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.003 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 3.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.7 ohm, 10 V, 1.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2200 μohm, 5 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.002 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 500 V, 0.125 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
VISHAY
N CHANNEL MOSFET, 25V, 50A, SOIC
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.8 A, 900 V, 2 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0078 ohm, 10 V, 3 V
(EN)
