规格：晶体管极性 双N沟道,
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0046 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.2 A, 20 V, 0.05 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 510 mA, 50 V, 2 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.011 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 18 mohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.047 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.7 A, 20 V, 68 mohm, 1 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V
(EN)
