规格：晶体管极性 P沟道,
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.105OHM, -3.4A, SOIC-8
(EN)NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -30 V, 0.025 ohm, -10 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10.8 A, -40 V, 0.0105 ohm, -10 V, -1.7 V
(EN)
