规格：晶体管极性 P沟道,
VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -65 A, -40 V, 0.012 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 75 A, -55 V, 8 mohm, -10 V, -2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, 250W, TO-220
(EN)
VISHAY
晶体管, MOSFET, P沟道, -580 mA, -20 V, 420 mohm, -4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -385 mA, -30 V, 1.25 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
(EN)TOSHIBA
晶体管, MOSFET, 功率, P沟道, -12 A, -40 V, 0.0061 ohm, -10 V, -800 mV
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.05 ohm, -10 V, -1.5 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)
