
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, 5.2 A, -12 V, 0.026 ohm, -4.5 V, -0.55 V

DIODES INC.
双极晶体管阵列, 双路, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V

DIODES INC.
单晶体管 双极, PNP, -150 V, 300 MHz, 300 mW, -600 mA, 60 hFE

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V

DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V

DIODES INC.
单管二极管 齐纳, MMSZ52系列, 10 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V

DIODES INC.
单管二极管 齐纳, MMSZ52系列, 16 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV

DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
