VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
INFINEON
标准功率二极管, 单, 650 V, 15 A, 1.6 V, 30 ns, 100 A
WOLFSPEED
功率场效应管, MOSFET, N沟道, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V
场效应管, MOSFET, N沟道, 100V, 90A, TO-263-3
GENESIC SEMICONDUCTOR
肖特基二极管, 300mA, 3.3KV, DO-214AA
快速/超快功率二极管, 单, 650 V, 40 A, 1.35 V, 77 ns, 320 A
晶体管, MOSFET, N沟道, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V
标准功率二极管, 单, 650 V, 15 A, 1.35 V, 71 ns, 120 A
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 引脚
功率场效应管, MOSFET, N沟道, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V
晶体管, MOSFET, N沟道, 16 A, 40 V, 0.008 ohm, 10 V, 2 V
标准功率二极管, 单, 650 V, 40 A, 1.6 V, 36 ns, 250 A
标准功率二极管, 单, 650 V, 15 A, 2.2 V, 30 ns, 100 A
Silicon Carbide Schottky Diode, Z-Rec 1200V Series, Dual Common Cathode, 1.2 kV, 38 A, 54 nC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 引脚
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
SOLID STATE
二极管, 标准, 25A, 200V, 通孔安装
合成包, 碳化硅结晶体管/肖特基二极管, 1.2KV, TO-263
单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
POWEREX
模块, 晶体管, IGBT, 1.2KV, 100A
(EN)
