产品分类：双极结晶体管阵列(BJT),规格：工作温度最高值 85°C,
ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 20 mA, 300 hFE, TO-78
(EN)
TEXAS INSTRUMENTS
芯片
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)
TEXAS INSTRUMENTS
功率外设驱动器
(EN)
ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 20 mA, 300 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 80 V, 4.3 W, 1.5 A, DIP
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 500mA, SOIC-18
(EN)
ON SEMICONDUCTOR
达林顿晶体管阵列, NPN, 7, 50V, SOIC, 整卷
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 7, 50V, SOIC, 整卷
(EN)
INTERSIL
双极晶体管阵列, NPN, 8 V, 30 mA, 70 hFE, SOIC
(EN)
ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 30 mA, 300 hFE, SOIC
(EN)
ANALOG DEVICES
双极晶体管阵列, 双PNP, 36 V, 20 mA, 165 hFE, DIP
(EN)ANALOG DEVICES
双极晶体管阵列, PNP, 36 V, 20 mA, 165 hFE, SOIC
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP
(EN)
