产品分类：晶体管,规格：漏源电压, Vds -30V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -300 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 56 mohm, -10 V, -1.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.6 A, -30 V, 0.024 ohm, -10 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.092 ohm, -10 V, -1.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.092 ohm, -10 V, -1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -3 A, -30 V, 0.062 ohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 4.9A
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.024 ohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 6.4A
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -60 A, -30 V, 0.0045 ohm, -10 V, -2.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -60 A, -30 V, 0.0045 ohm, -10 V, -2.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.5 A, -30 V, 0.071 ohm, -10 V, -1 V
(EN)
