产品分类：晶体管,规格：漏源电压, Vds 100V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 44 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.7 A, 100 V, 120 mohm, 10 V, 2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.029 ohm, 10 V, 1.6 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 100V, SOIC
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 100 V, 0.085 ohm, 10 V, 3 V
(EN)
VISHAY
单晶体管 双极, N沟道, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
(EN)
SEMIKRON
单晶体管 双极, 增强模式, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 3.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 36.7 A, 100 V, 0.014 ohm, 10 V, 1.5 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 100 V, 0.086 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.4 A, 100 V, 0.164 ohm, 10 V, 3 V
(EN)VISHAY
单晶体管 双极, N沟道, 180 A, 100 V, 6.5 mohm, 10 V
(EN)
