产品分类：晶体管,规格：阈值电压 Vgs 4V,
INFINEON
功率场效应管, MOSFET, N沟道, 11.3 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 600 V, 0.162 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, 双N沟道
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 2.8 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.31 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 100V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 80V, SOIC
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 370 mA, 500 V, 6.2 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 370 mA, 500 V, 6.2 ohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 0.061 ohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 0.061 ohm, 10 V, 4 V
(EN)
