
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV

VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV

VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV

VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV

DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV

DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV

VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV

VISHAY
场效应管, MOSFET, N沟道, 20V

VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV

VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV

VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV

VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV

VISHAY
晶体管, MOSFET, P沟道, -6.8 A, -12 V, 0.016 ohm, -1.8 V, 450 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV