产品分类：晶体管,规格：阈值电压 Vgs -,
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.5 A, -30 V, 0.052 ohm, -10 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道
(EN)
VISHAY
负载开关, MOSFET, N/P, 20V, SC-70
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.018 ohm, 10 V
(EN)
DIODES INC.
Dual MOSFET, N and P Complement, 3.8 A, 30 V, 0.034 ohm, 10 V, 1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 6 A, 620 V, 0.78 ohm, 10 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 1.2 A, 20 V, 0.132 ohm, 4.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 5 A, 60 V, 0.03 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.15 ohm, 10 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 0.035 ohm, 4.5 V
(EN)MICROCHIP
功率场效应管, MOSFET, N沟道, 300 mA, 650 V, 8 ohm, 0 V
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 2 A, 1.5 kV, 10 ohm, 10 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V
(EN)
GENESIC SEMICONDUCTOR
场效应管, JFET/SIC二极管合成包, 1.2KV, SOT-227
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V
(EN)
SEMELAB
双路场效应管, MOSFET, N和P沟道, 8 A, 160 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, 双路N沟道, 25V, SON-8
(EN)
VISHAY
场效应管, MOSFET, N+P沟道, 20V, TSOP
(EN)
VISHAY
单晶体管 双极, N沟道, 180 A, 100 V, 6.5 mohm, 10 V
(EN)
