产品分类：晶体管,规格：在电阻RDS（上） 1ohm,
NEXPERIA
双路场效应管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)NEXPERIA
双路场效应管, MOSFET, Trench, 双N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 5.3 A, 1.7 kV, 1 ohm, 20 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N+P沟道, 30V, SC-88
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 510 mA, 60 V, 1 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)NEXPERIA
双路场效应管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
(EN)
