产品分类：晶体管,规格：在电阻RDS（上） 400Mohm,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 300 V, 400 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
N CHANNEL MOSFET, 200V, 9A, TO-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 400 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.5 A, 900 V, 400 mohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 400 mohm, 10 V, 5.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 500V, 12A, TO-204AA
(EN)
VISHAY
场效应管, N通道, MOSFET, 600V, 16A, TO-247
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.1 A, -60 V, 400 mohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -0.75 A, -12 V, 400 mohm, -4.5 V, 680 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 1.45 A, -60 V, 400 mohm, -10 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 400 mohm, 10 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 30 A, 1 kV, 400 mohm, 10 V, 5 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)
