产品分类：晶体管,规格：在电阻RDS（上） 6ohm,
NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 6 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 185mA, TO-236
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 260 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 360 mA, 250 V, 6 ohm, 0 V
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.3 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, -185mA, SOT-23, 整卷
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
NXP
场效应管, N沟道, DMOS FET, 300V, 350mA, 3-SOT-223
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 800 mA, 650 V, 6 ohm, 10 V, 3 V
(EN)
