产品分类：晶体管,规格：电流, Id 连续 10A,
VISHAY
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.313 ohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 750 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 800 V, 0.53 ohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.35 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 0.64 V, 5 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.28 ohm, 20 V, 2.8 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 150 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 800 V, 0.93 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-263
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.69 ohm, 10 V, 3.75 V
(EN)
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-247AB
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 0.204 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.32 ohm, 10 V, 3 V
(EN)
