产品分类：晶体管,品牌：STMICROELECTRONICS,规格：MSL MSL 3 - 168小时,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 40 V, 5 A, 73 W, 480 MHz, 520 MHz, PowerSO-10RF
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.27 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.32 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF
(EN)STMICROELECTRONICS
晶体管, 射频FET, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, SOIC
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 600 V, 0.16 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
