产品分类：晶体管,品牌：IXYS SEMICONDUCTOR,规格：工作温度最高值 175°C,
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 150 V, 16 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.04 ohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 75 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 110 A, 100 V, 15 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 22 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 133 A, 100 V, 9 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 150 V, 11 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 100 A, 3.1 V, 750 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 225 A, 2.2 V, 1.15 kW, 1.2 kV, PLUS247, 3 引脚
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 A, 75 V, 0.0016 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 250 V, 24 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 96 A, 200 V, 24 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 180 A, 150 V, 11 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 100 V, 11 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 150 V, 10 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 引脚
(EN)
