产品分类：晶体管,规格：功耗 Pd 2.1W,
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.06 ohm, 4.5 V, 1.2 V
(EN)
WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2.1 W, 1.5 A, 17 hFE
(EN)WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2.1 W, 1 A, 7.5 hFE
(EN)WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2.1 W, 1 A, 7.5 hFE
(EN)WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2.1 W, 1.5 A, 17 hFE
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 12 V, 140 MHz, 2.1 W, 5.3 A, 250 hFE
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 7.4 A, 40 V, 0.0162 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 115 MHz, 2.1 W, -2.7 A, 295 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 150 MHz, 2.1 W, 6 A, 440 hFE
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)NEXPERIA
单晶体管 双极, PNP, -30 V, 80 MHz, 2.1 W, -6 A, 345 hFE
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)NEXPERIA
单晶体管 双极, PNP, 12 V, 140 MHz, 2.1 W, 5.3 A, 200 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 30 V, 115 MHz, 2.1 W, 6 A, 450 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 30 V, 115 MHz, 2.1 W, 6 A, 450 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -20 V, 80 MHz, 2.1 W, -6 A, 345 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -30 V, 80 MHz, 2.1 W, -6 A, 345 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -100 V, 115 MHz, 2.1 W, -2.7 A, 295 hFE
(EN)
