产品分类：晶体管,规格：功耗 Pd 33W,
INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0048 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 120 MHz, 33 W, 3 A, 80 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 40 V, 0.02 ohm, 10 V, 2.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 14 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0023 ohm, 10 V, 2.2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2.5 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 1.65 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 100 V, 33 W, -12 A, 1000 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 100 V, 33 W, 12 A, 1000 hFE
(EN)
STMICROELECTRONICS
晶体管, IGBT阵列&模块, N沟道, 10 A, 600 V, 33 W, SDIP
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-220F
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220-3
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.9 A, 900 V, 0.62 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
