产品分类：晶体管,规格：功耗 Pd 32W,
INFINEON
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.0275 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.027 ohm, 10 V, 2.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO-220FP-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-220F-3
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 500 V, 32 W, 5 A, 22 hFE
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.6 A, 560 V, 0.5 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.297 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.83 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 19.3 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, IGBT阵列&模块, NPN, 10 A, 1.5 V, 32 W, 600 V, SPM26-AAA
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.55 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.6 A, 650 V, 0.59 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 22 A, 60 V, 0.027 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 650 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
