产品分类：晶体管,规格：功耗 Pd 1.1W,
DIODES INC.
双极晶体管阵列, 通用, 双路, NPN, PNP, 30 V, 1.1 W, 1.5 A, 300 hFE, SOT-23
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 2.9 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -40 V, 110 MHz, 1.1 W, -4 A, 200 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 40 V, 150 MHz, 1.1 W, 4 A, 300 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 60 V, 1.1 W, 1 A, 100 hFE, SOT-23
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V
(EN)DIODES INC.
单晶体管 双极, PNP, 12 V, 55 MHz, 1.1 W, 4 A, 500 hFE
(EN)
VISHAY
场效应管, MOSFET, 双P沟道
(EN)
NXP
晶体管, BISS, NPN, 60V, 3A, 6-SOT-457
(EN)NEXPERIA
单晶体管 双极, PNP, -20 V, 80 MHz, 1.1 W, -4 A, 400 hFE
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.4A, CHIPFET-8
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 0.01Ω, -5.3A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -2.9 A, -20 V, 64 mohm, -4.5 V, -1.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8
(EN)DIODES INC.
单晶体管 双极, NPN, 50 V, 115 MHz, 1.1 W, 4 A, 450 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 40 V, 150 MHz, 1.1 W, 4 A, 300 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -40 V, 110 MHz, 1.1 W, -4 A, 200 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 150 MHz, 1.1 W, 5 A, 200 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 50 V, 115 MHz, 1.1 W, 4 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 12 V, 55 MHz, 1.1 W, 4 A, 500 hFE
(EN)DIODES INC.
双极晶体管阵列, 通用, 双路, NPN, PNP, 30 V, 1.1 W, 1.5 A, 300 hFE, SOT-23
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 60 V, 1.1 W, 1 A, 100 hFE, SOT-23
(EN)
